In the pursuit of high-efficiency power conversion, Silicon Carbide Metal-Oxide-Semiconductor Field-Effect Transistors (SiC MOSFETs) are reshaping the power electronics landscape with their superior performance. Among their critical characteristics, the on-resistance (Rdson) directly impacts device efficiency and reliability.

Silicon Carbide (SiC) MOSFETs, as representatives of third-generation semiconductor materials, are reshaping the power electronics landscape with their excellent performance. Leakage current, being a critical parameter affecting device reliability, requires particular attention in testing.